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RFP25N06, RF1S25N06, RF1S25N06SM Data Sheet January 2002 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA09771. Features * 25A, 60V * rDS(ON) = 0.047 * Temperature Compensating PSPICE(R) Model * Peak Current vs Pulse Width Curve * UIS Rating Curve * 175oC Operating Temperature * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER RFP25N06 RF1S25N06 RF1S25N06SM PACKAGE TO-220AB TO-262AA TO-263AB BRAND RFP25N06 F1S25N06 F1S25N06 Symbol D G NOTE: When ordering use the entire part number. Add the suffix, 9A, to obtain the TO-263AB variant in tape and reel, e.g. RF1S25N06SM9A. S Packaging JEDEC TO- 220AB SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) JEDEC TO-263AB DRAIN (FLANGE) JEDEC TO-262AA SOURCE DRAIN GATE DRAIN (FLANGE) (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SMS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP25N06, RF1S25N06, RF1S25N06SM 60 60 20 25 (Figure 5) (Figure 6) 72 0.48 -55 to 175 300 260 UNITS V V V A Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg W W/oC oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS VGS(TH) IDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 11) VGS = VDS, ID = 250A (Figure 10) VDS = 60V VGS = 0V TC = 25oC TC = 150oC MIN 60 2 VGS = 0 to 20V VGS = 0 to 10V VGS = 0 to 2V VDD = 48V, ID = 25A, RL = 1.92 Ig(REF) = 0.75mA (Figure 13) (Figure 3) TYP 14 30 45 22 975 330 95 MAX 4 1 50 100 0.047 60 100 80 45 3 2.083 62 UNITS V V A A nA ns ns ns ns ns ns nC nC nC pF pF pF oC/W oC/W Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time Total Gate Charge Gate Charge at 10V Threshold Gate Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient IGSS rDS(ON) tON td(ON) tr td(OFF) tf tOFF Qg(TOT) Qg(10) Qg(TH) CISS COSS CRSS RJC RJA VGS = 20V ID = 25A, VGS = 10V (Figure 9) VDD = 30V, ID = 12.5A RL = 2.4, VGS = 10V RGS = 10 (Figure 13) VDS = 25V, VGS = 0V f = 1MHz (Figure 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage Reverse Recovery Time SYMBOL VSD trr ISD = 25A ISD = 25A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.5 125 UNITS V ns (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 1.2 Unless Otherwise Specified 30 POWER DISSIPATION MULTIPLIER 1.0 0.8 0.6 0.4 0.2 0 0 25 50 125 75 100 TC , CASE TEMPERATURE (oC) 150 175 ID, DRAIN CURRENT (A) 25 20 15 10 5 0 25 50 75 100 125 TC, CASE TEMPERATURE (oC) 150 175 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 2 1 THERMAL IMPEDANCE 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 10-5 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 101 PDM ZJC, NORMALIZED 10-4 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 100 ID, DRAIN CURRENT (A) TC = 25oC TJ = MAX RATED SINGLE PULSE IDM, PEAK CURRENT (A) VGS = 20V 200 FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 175 - T C I = I 25 ----------------------- 150 VGS = 10V 100 100s 10 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1ms 10ms 100ms DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 -5 10 10-4 10-3 10-2 10-1 t, PULSE WIDTH (s) TC = 25oC 100 101 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 100 70 IAS, AVALANCHE CURRENT (A) 60 ID, DRAIN CURRENT (A) STARTING TJ = 25oC 50 40 30 VGS = 6V 20 10 10 0 VGS = 4.5V 0 2 4 6 VDS, DRAIN TO SOURCE VOLTAGE (V) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TC = 25oC VGS = 7V VGS = 20V VGS = 10V VGS = 8V Unless Otherwise Specified (Continued) 10 STARTING TJ = 150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] 1 0.01 1 0.1 tAV, TIME IN AVALANCHE (s) VGS = 5V 8 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY FIGURE 7. SATURATION CHARACTERISTICS 70 60 ID, DRAIN CURRENT (A) 50 175oC 40 30 20 10 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON RESISTANCE 10 VDD = 15V -55oC 25oC 2.5 2.0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 25A 1.5 1.0 0.5 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 8. TRANSFER CHARACTERISTICS FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 2.0 NORMALIZED DRAIN TO SOURCE VGS = VDS ID = 250A NORMALIZED GATE THRESHOLD VOLTAGE 1.5 2.0 ID = 250A BREAKDOWN VOLTAGE 1.5 1.0 1.0 0.5 0.5 0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 0 -80 -40 0 40 80 120 160 200 TJ , JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Typical Performance Curves 1600 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGD Unless Otherwise Specified (Continued) 60 VDS , DRAIN TO SOURCE VOLTAGE (V) VDD = BVDSS 45 VDD = BVDSS 7.5 10 VGS , GATE TO SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1200 CISS 30 0.75 BVDSS 15 0.50 BVDSS 0.25 BVDSS RL = 2.4 Ig(REF) = 0.75mA VGS = 10V 0 20 -------------------I g ( ACT ) I g ( REF ) t, TIME (s) 80 -------------------I g ( ACT ) I g ( REF ) 5.0 800 COSS 2.5 400 CRSS 0 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 25 NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS tON VDS VDS VGS RL + tOFF td(OFF) tr tf 90% td(ON) 90% DUT RGS VGS - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM Test Circuits and Waveforms (Continued) VDS RL VDD VDS VGS = 20V VGS + Qg(TOT) Qg(10) VDD VGS VGS = 2V 0 Qg(TH) Ig(REF) 0 VGS = 10V DUT Ig(REF) FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C RFP25N06, RF1S25N06, RF1S25N06SM PSPICE Electrical Model .SUBCKT RFP25N06 2 1 3 ; rev 8/19/94 CA 12 8 1.83e-9 CB 15 14 1.98e-9 CIN 6 8 9.7e-10 DPLCAP 5 LDRAIN RSCL1 RSCL2 + 51 5 ESCL 51 50 RDRAIN 16 VTO 6 + 21 MOS1 RIN CIN 8 RSOURCE 7 LSOURCE 3 SOURCE DBREAK DBODY 7 5 DBDMOD DBREAK 5 11 DBKMOD DPLCAP 10 5 DPLCAPMOD EBREAK 11 7 17 18 65.9 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTO 20 6 18 8 1 IT 8 17 1 GATE 10 DRAIN 2 ESG + EVTO + 18 8 6 8 11 17 EBREAK 18 MOS2 + DBODY - LDRAIN 2 5 1e-9 LGATE 1 9 4.92e-9 LSOURCE 3 7 4.5e-9 1 LGATE 9 20 - RGATE MOS1 16 6 8 8 MOSMOD M = 0.99 MOS2 16 21 8 8 MOSMOD M = 0.01 RBREAK 17 18 RBKMOD 1 RDRAIN 50 16 RDSMOD 1.1e-3 RGATE 9 20 2.88 RIN 6 8 1e9 RSCL1 5 51 RSCLMOD 1e-6 RSCL2 5 50 1e3 RSOURCE 8 7 RDSMOD 20.3e-3 RVTO 18 19 RVTOMOD 1 S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD S1A 12 13 8 S1B CA + EGS 6 8 S2A 14 13 S2B 13 CB + EDS 5 8 14 15 RBREAK 17 18 RVTO IT 19 VBAT + - - VBAT 8 19 DC 1 VTO 21 6 0.764 ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/108,6))} .MODEL DBDMOD D (IS = 2.32e-13 RS = 5.72e-3 TRS1 = 2.56e-3 TRS2 = -5.13e-6 CJO = 1.18e-9 TT = 5.62e-8) .MODEL DBKMOD D (RS = 2.00e-1 TRS1 = 3.33e-4 TRS2 = 2.68e-6) .MODEL DPLCAPMOD D (CJO = 6.55e-10 IS = 1e-30 N = 10) .MODEL MOSMOD NMOS (VTO = 3.89 KP = 15.03 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL RBKMOD RES (TC1 = 1.04e-3 TC2 = -1.04e-6) .MODEL RDSMOD RES (TC1 = 5.85e-3 TC2 = 1.77e-5) .MODEL RSCLMOD RES (TC1 = 2.0e-3 TC2 = 1.5e-6) .MODEL RVTOMOD RES (TC1 = -5.35e-3 TC2 = -3.77e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.04 VOFF= -3.04) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.04 VOFF= -5.04) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.02 VOFF= 1.98) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.98 VOFF= -3.02) .ENDS NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; written by William J. Hepp and C. Frank Wheatley. (c)2002 Fairchild Semiconductor Corporation RFP25N06, RF1S25N06, RF1S25N06SM Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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